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savantic semiconductor product specification silicon npn power transistors 2SC3264 d escription with mt-200 package complement to type 2sa1295 applications audio and general purpose applications pinning(see fig.2) pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 230 v v ceo collector-emitter voltage open base 230 v v ebo emitter-base voltage open collector 5 v i c collector current 17 a i b base current 5 a p c collector power dissipation t c =25 200 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (mt-200) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC3264 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =25ma ; i b =0 230 v v cesat collector-emitter saturation voltage i c =5a; i b =0.5a 2.0 v i cbo collector cut-off current v cb =230v; i e =0 100 a i ebo emitter cut-off current v eb =5v; i c =0 100 a h fe dc current gain i c =5a ; v ce =4v 50 140 c ob output capacitance i e =0 ; v cb =10v;f=1mhz 250 pf f t transition frequency i e =-2a ; v ce =12v 60 mhz switching times t on turn-on time 0.30 s t s storage time 2.40 s t f fall time i c =5a;r l =12 @ i b1 =- i b2 =0.5a v cc =60v 0.50 s h fe classifications o y 50-100 70-140
savantic semiconductor product specification 3 silicon npn power transistors 2SC3264 package outline fig.2 outline dimensions
savantic semiconductor product specification 4 silicon npn power transistors 2SC3264

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